Print Page
SISH892BDN-T1-GE3
Power MOSFET, N Channel, 100 V, 20 A, 0.0304 ohm, PowerPAK 1212, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSISH892BDN-T1-GE3Copy
Manufacturer Standard Lead Time54 weeks
Newark Part No.87AJ3412
Product RangeTrenchFET Gen IV
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 54 week(s)
Notify me when back in stock
| Quantity | Price |
|---|---|
| 6000+ | $0.512 |
Price for:Each
Minimum: 6000
Multiple: 6000
$3,072.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSISH892BDN-T1-GE3Copy
Manufacturer Standard Lead Time54 weeks
Newark Part No.87AJ3412
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id20A
Drain Source On State Resistance0.0304ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.4V
Power Dissipation29W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
20A
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
29W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0304ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.4V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
SVHC
To Be Advised
Technical Docs (1)
Alternatives for SISH892BDN-T1-GE3
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate