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SQ4532AEY-T1_GE3
MOSFET, COMPLEMENTARY, 30V, 7.3A, 3.3W ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQ4532AEY-T1_GE3
Newark Part No.75AH9254
Product RangeTrenchFET Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $1.070 |
| 10+ | $0.832 |
| 25+ | $0.780 |
| 50+ | $0.743 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$1.07
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQ4532AEY-T1_GE3
Newark Part No.75AH9254
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Continuous Drain Current Id7.3A
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel7.3A
Continuous Drain Current Id P Channel7.3A
Drain Source On State Resistance N Channel0.021ohm
Drain Source On State Resistance P Channel0.021ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel3.3W
Power Dissipation P Channel3.3W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
SVHCNo SVHC (07-Nov-2024)
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
7.3A
Drain Source On State Resistance P Channel
0.021ohm
No. of Pins
8Pins
Power Dissipation P Channel
3.3W
Product Range
TrenchFET Series
SVHC
No SVHC (07-Nov-2024)
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
7.3A
Continuous Drain Current Id N Channel
7.3A
Drain Source On State Resistance N Channel
0.021ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
3.3W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability