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SQ4946CEY-T1_GE3
Dual MOSFET, N Channel, 60 V, 7 A, 0.04 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQ4946CEY-T1_GE3Copy
Newark Part No.42AJ0901
Product RangeTrenchFET Series
Your Part Number
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQ4946CEY-T1_GE3Copy
Newark Part No.42AJ0901
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel7A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.04ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel4W
Power Dissipation P Channel-
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
TrenchFET Series
SVHC
To Be Advised
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
7A
Drain Source On State Resistance N Channel
0.04ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
4W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Technical Docs (1)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
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Product Compliance Certificate
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