Print Page
C2M0280120D
Silicon Carbide MOSFET, Single, N Channel, 10 A, 1.2 kV, 0.28 ohm, TO-247
Image is for illustrative purposes only. Please refer to product description.
ManufacturerWOLFSPEED
Manufacturer Part NoC2M0280120DCopy
Manufacturer Standard Lead Time24 weeks
Newark Part No.98Y6013
Your Part Number
1 In Stock
Need more?
Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $8.910 |
| 10+ | $8.040 |
| 25+ | $7.270 |
| 50+ | $6.820 |
| 100+ | $6.360 |
| 250+ | $5.310 |
| 500+ | $5.160 |
Price for:Each
Minimum: 1
Multiple: 1
$8.91
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerWOLFSPEED
Manufacturer Part NoC2M0280120DCopy
Manufacturer Standard Lead Time24 weeks
Newark Part No.98Y6013
Transistor PolarityN Channel
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id10A
On Resistance Rds(on)0.28ohm
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.28ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Power Dissipation Pd62.5W
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.8V
Power Dissipation62.5W
Operating Temperature Max150°C
Product Range-
MSL-
SVHCNo SVHC (17-Dec-2015)
Technical Specifications
Transistor Polarity
N Channel
Channel Type
N Channel
On Resistance Rds(on)
0.28ohm
Drain Source On State Resistance
0.28ohm
No. of Pins
3Pins
Rds(on) Test Voltage
20V
Power Dissipation
62.5W
Product Range
-
SVHC
No SVHC (17-Dec-2015)
MOSFET Module Configuration
Single
Continuous Drain Current Id
10A
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Power Dissipation Pd
62.5W
Gate Source Threshold Voltage Max
2.8V
Operating Temperature Max
150°C
MSL
-
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate