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C3M0065090J
Silicon Carbide MOSFET, Single, N Channel, 35 A, 900 V, 0.065 ohm, TO-263 (D2PAK)
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| 1+ | $14.930 |
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Product Information
ManufacturerWOLFSPEED
Manufacturer Part NoC3M0065090J
Newark Part No.98Y6017
Technical Datasheet
Transistor PolarityN Channel
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id35A
On Resistance Rds(on)0.065ohm
Drain Source Voltage Vds900V
Drain Source On State Resistance0.065ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Power Dissipation Pd113W
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max2.1V
Power Dissipation113W
Operating Temperature Max150°C
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (17-Dec-2015)
Technical Specifications
Transistor Polarity
N Channel
Channel Type
N Channel
On Resistance Rds(on)
0.065ohm
Drain Source On State Resistance
0.065ohm
No. of Pins
7Pins
Rds(on) Test Voltage
15V
Power Dissipation
113W
Product Range
-
SVHC
No SVHC (17-Dec-2015)
MOSFET Module Configuration
Single
Continuous Drain Current Id
35A
Drain Source Voltage Vds
900V
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
113W
Gate Source Threshold Voltage Max
2.1V
Operating Temperature Max
150°C
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate