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CAB450M12XM3
Silicon Carbide MOSFET, Half Bridge, N Channel, 450 A, 1.2 kV, 0.0026 ohm, Module
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| Quantity | Price |
|---|---|
| 1+ | $1,074.960 |
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$1,074.96
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Product Information
ManufacturerWOLFSPEED
Manufacturer Part NoCAB450M12XM3
Newark Part No.21AH3192
Technical Datasheet
Transistor PolarityDual N Channel
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id450A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)0.0026ohm
Drain Source On State Resistance0.0026ohm
Transistor Case StyleModule
Power Dissipation Pd-
No. of Pins-
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max2.5V
Power Dissipation-
Operating Temperature Max175°C
Product Range-
SVHCTo Be Advised
Product Overview
Applications
Medical
Technical Specifications
Transistor Polarity
Dual N Channel
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
0.0026ohm
Power Dissipation Pd
-
Rds(on) Test Voltage
15V
Power Dissipation
-
Product Range
-
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
450A
On Resistance Rds(on)
0.0026ohm
Transistor Case Style
Module
No. of Pins
-
Gate Source Threshold Voltage Max
2.5V
Operating Temperature Max
175°C
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability