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SI2303BDS-T1-E3
Power MOSFET, P Channel, 30 V, 1.49 A, 0.2 ohm, SOT-23, Surface Mount
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No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2303BDS-T1-E3Copy
Newark Part No.06J7566
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id1.49A
Drain Source On State Resistance0.2ohm
On Resistance Rds(on)0.15ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd700mW
Transistor Case StyleSOT-23
Gate Source Threshold Voltage Max3V
Power Dissipation700mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCTo Be Advised
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Product Overview
The SI2303BDS-T1-E3 is a 30VDS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.2ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
700mW
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
1.49A
On Resistance Rds(on)
0.15ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-23
Power Dissipation
700mW
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate