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GD50HFU120C1S
IGBT Module, Half Bridge, 78 A, 3.15 V, 414 W, 150 °C, Module
Image is for illustrative purposes only. Please refer to product description.

ManufacturerSTARPOWER
Manufacturer Part NoGD50HFU120C1SCopy
Manufacturer Standard Lead Time22 weeks
Newark Part No.25AK0626
Your Part Number
231 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $56.640 |
| 5+ | $54.380 |
| 10+ | $52.090 |
| 48+ | $49.770 |
| 72+ | $47.270 |
| 120+ | $46.530 |
| 264+ | $45.430 |
Price for:Each
Minimum: 1
Multiple: 1
$56.64
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Product Information
ManufacturerSTARPOWER
Manufacturer Part NoGD50HFU120C1SCopy
Manufacturer Standard Lead Time22 weeks
Newark Part No.25AK0626
Technical Datasheet
IGBT ConfigurationHalf Bridge
Continuous Collector Current78A
DC Collector Current78A
Collector Emitter Saturation Voltage Vce(on)3.15V
Collector Emitter Saturation Voltage3.15V
Power Dissipation414W
Power Dissipation Pd414W
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
Collector Emitter Voltage V(br)ceo1.2kV
IGBT TechnologyNPT IGBT [Standard]
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Half Bridge
DC Collector Current
78A
Collector Emitter Saturation Voltage
3.15V
Power Dissipation Pd
414W
Junction Temperature, Tj Max
150°C
IGBT Termination
Stud
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Mounting
Panel
SVHC
To Be Advised
Continuous Collector Current
78A
Collector Emitter Saturation Voltage Vce(on)
3.15V
Power Dissipation
414W
Operating Temperature Max
150°C
Transistor Case Style
Module
Collector Emitter Voltage Max
1.2kV
IGBT Technology
NPT IGBT [Standard]
Product Range
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate