Print Page
DMN32D4SDW-7
MOSFET, DUAL, N-CH, 30V, 0.65A
Image is for illustrative purposes only. Please refer to product description.
70 In Stock
Need more?
Delivery in 4-6 Business Days(UK stock)
View cut-off times
| Quantity | Price |
|---|---|
| 5+ | $8.140 |
| 10+ | $5.060 |
| 25+ | $4.440 |
| 50+ | $3.820 |
| 100+ | $3.200 |
| 250+ | $2.800 |
| 500+ | $2.380 |
| 1000+ | $2.120 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$40.70
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN32D4SDW-7Copy
Newark Part No.28AK8572
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id650mA
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel650mA
Continuous Drain Current Id P Channel650mA
Drain Source On State Resistance N Channel0.4ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel350mW
Power Dissipation P Channel350mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
650mA
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
350mW
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Continuous Drain Current Id
650mA
Continuous Drain Current Id N Channel
650mA
Drain Source On State Resistance N Channel
0.4ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
350mW
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate