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DMN4468LSS-13
MOSFET, N-CH, 30V, 10A, SOIC
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMN4468LSS-13Copy
Manufacturer Standard Lead Time42 weeks
Newark Part No.28AK8590
Your Part Number
1,000 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
| Quantity | Price |
|---|---|
| 5+ | $0.830 |
| 10+ | $0.516 |
| 25+ | $0.454 |
| 50+ | $0.394 |
| 100+ | $0.332 |
| 250+ | $0.293 |
| 500+ | $0.253 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$4.15
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN4468LSS-13Copy
Manufacturer Standard Lead Time42 weeks
Newark Part No.28AK8590
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id10A
On Resistance Rds(on)0.011ohm
Drain Source On State Resistance0.011ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.95V
Power Dissipation1.52W
Power Dissipation Pd1.52W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.011ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
1.52W
No. of Pins
8Pins
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
10A
Drain Source On State Resistance
0.011ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.95V
Power Dissipation Pd
1.52W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate