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DMN65D8L-7
Power MOSFET, N Channel, 60 V, 310 mA, 3 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMN65D8L-7Copy
Manufacturer Standard Lead Time43 weeks
Newark Part No.
Full Reel86AK4794
Re-Reel82Y6582RL
Cut Tape82Y6582
Your Part Number
5,969 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.176 | $0.18 |
| Total Price | $0.18 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.176 |
| 50+ | $0.105 |
| 100+ | $0.068 |
| 250+ | $0.060 |
| 500+ | $0.053 |
| 1000+ | $0.047 |
| 2500+ | $0.041 |
| 5000+ | $0.034 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.034 |
| 6000+ | $0.032 |
| 12000+ | $0.030 |
| 18000+ | $0.027 |
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN65D8L-7Copy
Manufacturer Standard Lead Time43 weeks
Newark Part No.
Full Reel86AK4794
Re-Reel82Y6582RL
Cut Tape82Y6582
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id310mA
On Resistance Rds(on)2ohm
Drain Source On State Resistance3ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Power Dissipation Pd370mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation370mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
DMN65D8L-7 is a N-channel enhancement mode MOSFET. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications include DC-DC converters, power-management functions, battery-operated systems and solid-state relays, drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
- Low on-resistance, low gate threshold voltage
- Low input capacitance, fast switching speed
- Small surface-mount package, ESD protected gate
- Drain-source voltage is 60V at TA = +25°C
- Gate-source voltage is ±20V at TA = +25°C
- Continuous drain current is 310mA at TA = +25°C, steady state, VGS = 10V
- Pulsed drain current (10µs pulse, duty cycle = 1%) is 800mA at TA = +25°C
- Total power dissipation is 370mW at TA = +25°C
- SOT23 (standard) package
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
2ohm
Transistor Case Style
SOT-23
Power Dissipation Pd
370mW
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
310mA
Drain Source On State Resistance
3ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
370mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate