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DMT6012LSS-13
MOSFET, N-CH, 60V, 10.4A, SOIC
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMT6012LSS-13Copy
Manufacturer Standard Lead Time42 weeks
Newark Part No.28AK8888
Your Part Number
Available to Order
| Quantity | Price |
|---|---|
| 5+ | $0.765 |
| 10+ | $0.469 |
| 25+ | $0.416 |
| 50+ | $0.364 |
| 100+ | $0.312 |
| 250+ | $0.276 |
| 500+ | $0.239 |
| 1000+ | $0.210 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$3.82
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMT6012LSS-13Copy
Manufacturer Standard Lead Time42 weeks
Newark Part No.28AK8888
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id10.4A
Drain Source On State Resistance8400µohm
On Resistance Rds(on)0.0084ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation Pd1.2W
Power Dissipation1.2W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
8400µohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation Pd
1.2W
No. of Pins
8Pins
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
10.4A
On Resistance Rds(on)
0.0084ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
Power Dissipation
1.2W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate