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ZVN2110A
MOSFET, N, E-LINE
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoZVN2110ACopy
Manufacturer Standard Lead Time41 weeks
Newark Part No.98K4100
Your Part Number
4,783 In Stock
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Delivery in 4-6 Business Days(UK stock)
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| Quantity | Price |
|---|---|
| 1+ | $1.100 |
| 10+ | $0.836 |
| 100+ | $0.586 |
| 500+ | $0.466 |
| 1000+ | $0.437 |
| 2500+ | $0.427 |
| 12000+ | $0.411 |
Price for:Each
Minimum: 1
Multiple: 1
$1.10
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZVN2110ACopy
Manufacturer Standard Lead Time41 weeks
Newark Part No.98K4100
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id320mA
Drain Source On State Resistance4ohm
On Resistance Rds(on)4ohm
Transistor Case StyleTO-226AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd700mW
Gate Source Threshold Voltage Max2.4V
Power Dissipation700mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
ZVN2110A is a N-channel enhancement mode vertical DMOS FET.
- Drain-source voltage is 100V
- Continuous drain current at Tamb=25° is 320mA
- Pulsed drain current is 6A
- Gate source voltage is ±20V
- Power dissipation at Tamb=25°C is 700mW
- Drain-source breakdown voltage is 100V min at ID=1mA, VGS=0V, Tamb=25°C
- Static drain-source on-state resistance is 4ohm max at VGS=10V, ID=1A, Tamb=25°C
- Turn-off delay time is 13ns max at VDD ≈25V, ID=1A, Tamb=25°C
- E-Line package
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
4ohm
Transistor Case Style
TO-226AA
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
320mA
On Resistance Rds(on)
4ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
700mW
Power Dissipation
700mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Alternatives for ZVN2110A
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate