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AUIRF7647S2TR
Power MOSFET, N Channel, 100 V, 24 A, 0.031 ohm, DirectFET SC, Surface Mount
5,934 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $3.260 | $3.26 |
| Total Price | $3.26 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $3.260 |
| 10+ | $2.040 |
| 25+ | $1.910 |
| 50+ | $1.810 |
| 100+ | $1.690 |
| 250+ | $1.550 |
| 500+ | $1.410 |
| 1000+ | $1.270 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoAUIRF7647S2TRCopy
Manufacturer Standard Lead Time22 weeks
Newark Part No.
Re-Reel91Y4158
Cut Tape91Y4158
Product RangeHEXFET
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id24A
On Resistance Rds(on)0.026ohm
Drain Source On State Resistance0.031ohm
Transistor Case StyleDirectFET SC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation41W
Power Dissipation Pd41W
No. of Pins7Pins
Operating Temperature Max175°C
Product RangeHEXFET
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Product Overview
- Automotive qualified Directed® power MOSFET
- Advanced process technology
- Optimized for class D audio amplifier applications
- Low Rds.(on) for improved efficiency
- Low Qi for better THD and improved efficiency
- Low Qtr. for better THD and lower EMI
- Low parasitic inductance for reduced ringing and lower EMI
- Delivers up to 100W per channel into 8ohm with no heatsink
- Dual sided cooling
- Repetitive avalanche capability for robustness and reliability
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.026ohm
Transistor Case Style
DirectFET SC
Rds(on) Test Voltage
10V
Power Dissipation
41W
No. of Pins
7Pins
Product Range
HEXFET
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
24A
Drain Source On State Resistance
0.031ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
41W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate