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FF450R12KT4HOSA1
IGBT Array & Module Transistor, Dual NPN
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Product Information
ManufacturerINFINEON
Manufacturer Part NoFF450R12KT4HOSA1Copy
Newark Part No.27X9049
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Continuous Collector Current580A
Collector Emitter Saturation Voltage1.75V
Power Dissipation2.4kW
Operating Temperature Max150°C
Transistor Case StyleModule
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyIGBT 4 [Trench/Field Stop]
Transistor MountingPanel
Product Range-
SVHCNo SVHC (25-Jun-2025)
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Technical Specifications
IGBT Configuration
Dual [Half Bridge]
Collector Emitter Saturation Voltage
1.75V
Operating Temperature Max
150°C
IGBT Termination
Stud
IGBT Technology
IGBT 4 [Trench/Field Stop]
Product Range
-
Continuous Collector Current
580A
Power Dissipation
2.4kW
Transistor Case Style
Module
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate