Print Page
FF6MR12W2M1PB11BPSA1
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 200 A, 1.2 kV, 0.00563 ohm, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoFF6MR12W2M1PB11BPSA1
Newark Part No.91AH7523
Product RangeEasyDUAL CoolSiC
Technical Datasheet
No Longer Available
Product Information
ManufacturerINFINEON
Manufacturer Part NoFF6MR12W2M1PB11BPSA1
Newark Part No.91AH7523
Product RangeEasyDUAL CoolSiC
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Transistor PolarityDual N Channel
Channel TypeDual N Channel
Continuous Drain Current Id200A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)0.00563ohm
Drain Source On State Resistance0.00563ohm
Transistor Case StyleModule
No. of Pins-
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max4.5V
Power Dissipation Pd-
Power Dissipation-
Operating Temperature Max150°C
Product RangeEasyDUAL CoolSiC
SVHCNo SVHC (27-Jun-2018)
Technical Specifications
MOSFET Module Configuration
Half Bridge
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
0.00563ohm
No. of Pins
-
Gate Source Threshold Voltage Max
4.5V
Power Dissipation
-
Product Range
EasyDUAL CoolSiC
Transistor Polarity
Dual N Channel
Continuous Drain Current Id
200A
On Resistance Rds(on)
0.00563ohm
Transistor Case Style
Module
Rds(on) Test Voltage
15V
Power Dissipation Pd
-
Operating Temperature Max
150°C
SVHC
No SVHC (27-Jun-2018)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate