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IGP30N60H3XKSA1
IGBT, 30 A, 2.4 V, 187 W, 600 V, TO-220, 3 Pins
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ManufacturerINFINEON
Manufacturer Part NoIGP30N60H3XKSA1
Newark Part No.13T9413
Also Known AsIGP30N60H3, SP000702546
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $2.980 |
| 10+ | $2.670 |
| 100+ | $2.180 |
| 500+ | $1.860 |
| 1000+ | $1.710 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIGP30N60H3XKSA1
Newark Part No.13T9413
Also Known AsIGP30N60H3, SP000702546
Technical Datasheet
Continuous Collector Current30A
DC Collector Current30A
Collector Emitter Saturation Voltage Vce(on)2.4V
Collector Emitter Saturation Voltage2.4V
Power Dissipation187W
Power Dissipation Pd187W
Collector Emitter Voltage V(br)ceo600V
Collector Emitter Voltage Max600V
Transistor Case StyleTO-220
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
MSL-
Product Overview
The IGP30N60H3 is a High Speed IGBT in Trench and field-stop technology. The high speed device is used to reduce the size of the active components (25 to 70kHz). Infineon's high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses.
- Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz
- Low switching losses for high efficiency
- Fast switching behaviour with low EMI emissions
- Optimized diode for target applications, meaning further improvement in switching losses
- Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
- Short-circuit capability
- Excellent performance
- Low switching and conduction losses
- Very good EMI behaviour
- Small gate resistor for reduced delay time and voltage overshoot
- Best-in-class IGBT efficiency and EMI behaviour
- Packaged with and without freewheeling diode for increased design freedom
- Green product
- Halogen-free
Applications
Power Management, Alternative Energy
Technical Specifications
Continuous Collector Current
30A
Collector Emitter Saturation Voltage Vce(on)
2.4V
Power Dissipation
187W
Collector Emitter Voltage V(br)ceo
600V
Transistor Case Style
TO-220
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
DC Collector Current
30A
Collector Emitter Saturation Voltage
2.4V
Power Dissipation Pd
187W
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
MSL
-
Technical Docs (1)
Alternatives for IGP30N60H3XKSA1
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate