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IMCQ120R078M2HXTMA1
Silicon Carbide MOSFET, Single, N Channel, 31 A, 1.2 kV, 0.0781 ohm, HDSOP
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIMCQ120R078M2HXTMA1Copy
Manufacturer Standard Lead Time42 weeks
Newark Part No.
Re-Reel27AM0103RL
Cut Tape27AM0103
Product RangeCoolSiC Series
Your Part Number
290 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $8.620 | $8.62 |
| Total Price | $8.62 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $8.620 |
| 50+ | $5.850 |
| 100+ | $4.370 |
| 250+ | $4.280 |
| 500+ | $4.200 |
| 1000+ | $4.110 |
| 2500+ | $4.030 |
| 5000+ | $3.940 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIMCQ120R078M2HXTMA1Copy
Manufacturer Standard Lead Time42 weeks
Newark Part No.
Re-Reel27AM0103RL
Cut Tape27AM0103
Product RangeCoolSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id31A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.0781ohm
Transistor Case StyleHDSOP
No. of Pins22Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.1V
Power Dissipation176W
Operating Temperature Max175°C
Product RangeCoolSiC Series
SVHCNo SVHC (25-Jun-2025)
Product Overview
IMCQ120R078M2HXTMA1 is a N-channel CoolSiC™ 1200V SiC MOSFET G2, ideal for a wide range of applications such as solid-state circuit breakers and relays, EV charging stations, online and industrial UPS systems, string inverters, general-purpose drives (GPD), commercial air vehicles (CAV), and servo drives.
- VDSS = 1200 V at Tvj = 25°C
- IDDC = 22A at TC = 100°C
- RDS(on) = 78.1mohm at VGS = 18V, Tvj = 25°C
- Very low switching losses
- Overload operation up to Tvj = 200°C
- Short circuit withstand time of 2µs
- Benchmark gate threshold voltage, VGS(th) = 4.2 V
- Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
- Robust body diode for hard commutation
- .XT interconnection technology for best-in-class thermal performance
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
31A
Drain Source On State Resistance
0.0781ohm
No. of Pins
22Pins
Gate Source Threshold Voltage Max
5.1V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
HDSOP
Rds(on) Test Voltage
18V
Power Dissipation
176W
Product Range
CoolSiC Series
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate