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IPB017N06N3GATMA1
PWR MOSFET, N CHANNEL, 60V, 180A
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPB017N06N3GATMA1Copy
Manufacturer Standard Lead Time17 weeks
Newark Part No.60R2643
Also Known AsIPB017N06N3 G, SP000434404
Your Part Number
867 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $2.930 |
| 10+ | $2.540 |
| 25+ | $2.220 |
| 50+ | $2.090 |
| 100+ | $1.820 |
| 250+ | $1.520 |
| 500+ | $1.470 |
Price for:Each
Minimum: 1
Multiple: 1
$2.93
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB017N06N3GATMA1Copy
Manufacturer Standard Lead Time17 weeks
Newark Part No.60R2643
Also Known AsIPB017N06N3 G, SP000434404
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id180A
On Resistance Rds(on)0.0013ohm
Drain Source On State Resistance1700µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd250W
Gate Source Threshold Voltage Max3V
Power Dissipation250W
No. of Pins7Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
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Product Overview
The IPB017N06N3 G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
- Highest system efficiency
- Less paralleling required
- Increased power density
- Very low voltage overshoot
- Superior thermal resistance
Applications
Power Management, Alternative Energy, Motor Drive & Control, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
180A
Drain Source On State Resistance
1700µohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
250W
Power Dissipation
250W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.0013ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
7Pins
Product Range
-
MSL
MSL 1 - Unlimited
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate