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IPD110N12N3GATMA1
MOSFET, N-CH, 120V, 75A, TO252-3
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPD110N12N3GATMA1Copy
Manufacturer Standard Lead Time12 weeks
Newark Part No.
Full Reel86AK5200
Re-Reel47W3469RL
Cut Tape47W3469
Also Known AsIPD110N12N3 G, SP001127808
Your Part Number
25,304 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $2.310 | $2.31 |
| Total Price | $2.31 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $2.310 |
| 50+ | $1.130 |
| 100+ | $1.020 |
| 250+ | $0.920 |
| 500+ | $0.822 |
| 1000+ | $0.814 |
| 2500+ | $0.798 |
| 5000+ | $0.781 |
Full Reel
| Quantity | Price |
|---|---|
| 2500+ | $0.820 |
| 7500+ | $0.797 |
| 12500+ | $0.781 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD110N12N3GATMA1Copy
Manufacturer Standard Lead Time12 weeks
Newark Part No.
Full Reel86AK5200
Re-Reel47W3469RL
Cut Tape47W3469
Also Known AsIPD110N12N3 G, SP001127808
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds120V
Continuous Drain Current Id75A
Drain Source On State Resistance11mohm
On Resistance Rds(on)0.0092ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd136W
Gate Source Threshold Voltage Max3V
Power Dissipation136W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IPD110N12N3 G is an OptiMOS™ N-channel Power MOSFET offers at the same time the lowest ON-state resistances of the industry and the fastest switching behaviour, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilities for optimized solutions.
- Excellent switching performance
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- Halogen-free, Green device
- Qualified according to JEDEC for target application
- MSL1 rated 2
Applications
Power Management, Motor Drive & Control, Audio, Communications & Networking, Industrial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
120V
Drain Source On State Resistance
11mohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 3 - 168 hours
Transistor Polarity
N Channel
Continuous Drain Current Id
75A
On Resistance Rds(on)
0.0092ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
136W
Power Dissipation
136W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate