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IPD35N10S3L26ATMA1
Power MOSFET, N Channel, 100 V, 35 A, 0.024 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPD35N10S3L26ATMA1Copy
Manufacturer Standard Lead Time11 weeks
Newark Part No.
Full Reel86AK5209
Re-Reel50Y2034RL
Cut Tape50Y2034
Product RangeOptiMOS T Series
Your Part Number
1,046 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Available in quantity shown
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $2.430 | $2.43 |
| Total Price | $2.43 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $2.430 |
| 50+ | $1.490 |
| 100+ | $1.070 |
| 250+ | $0.936 |
| 500+ | $0.801 |
| 1000+ | $0.784 |
| 2500+ | $0.717 |
| 5000+ | $0.702 |
Full Reel
| Quantity | Price |
|---|---|
| 2500+ | $0.692 |
| 5000+ | $0.684 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD35N10S3L26ATMA1Copy
Manufacturer Standard Lead Time11 weeks
Newark Part No.
Full Reel86AK5209
Re-Reel50Y2034RL
Cut Tape50Y2034
Product RangeOptiMOS T Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id35A
Drain Source On State Resistance0.024ohm
On Resistance Rds(on)0.02ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd71W
Gate Source Threshold Voltage Max1.7V
Power Dissipation71W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS T Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (21-Jan-2025)
Alternatives for IPD35N10S3L26ATMA1
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Product Overview
The IPD35N10S3L-26 is a N-channel enhancement-mode MOSFET with lowest switching and conduction power losses for highest thermal efficiency.
- AEC-Q101 qualified
- MSL1 up to 260°C peak reflow
- Green device
- 100% Avalanche tested
- Robust packages with superior quality and reliability
- Optimized total gate charge enables smaller driver output stages
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.024ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.7V
No. of Pins
3Pins
Product Range
OptiMOS T Series
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
35A
On Resistance Rds(on)
0.02ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
71W
Power Dissipation
71W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate