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                      1. Home
                      2. Semiconductors - Discretes
                      3. FETs
                      4. Single MOSFETs
                      Print Page

                      IRF2804PBF

                      Power MOSFET, N Channel, 40 V, 280 A, 0.0023 ohm, TO-220AB, Through Hole

                      INFINEON IRF2804PBF
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerINFINEON
                      Manufacturer Part NoIRF2804PBF
                      Newark Part No.33X8392
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      Available to Order
                      Manufacturer Standard Lead Time: 15 week(s)
                      QuantityPrice
                      1+$2.460
                      10+$1.640
                      100+$1.520
                      500+$1.250
                      1000+$1.190
                      3000+$1.120
                      Price for:Each
                      Minimum: 1
                      Multiple: 1
                      $2.46
                      Enter Your Part No/Line Note
                      Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
                      This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.

                      Product Information

                      ManufacturerINFINEON
                      Manufacturer Part NoIRF2804PBF
                      Newark Part No.33X8392
                      Technical Datasheet

                      Data Sheet

                      Transistor PolarityN Channel
                      Channel TypeN Channel
                      Drain Source Voltage Vds40V
                      Continuous Drain Current Id280A
                      On Resistance Rds(on)0.0023ohm
                      Drain Source On State Resistance0.0023ohm
                      Transistor Case StyleTO-220AB
                      Transistor MountingThrough Hole
                      Rds(on) Test Voltage10V
                      Gate Source Threshold Voltage Max4V
                      Power Dissipation330W
                      Power Dissipation Pd330W
                      No. of Pins3Pins
                      Operating Temperature Max175°C
                      Product Range-
                      Qualification-
                      MSL-
                      SVHCNo SVHC (21-Jan-2025)

                      Product Overview

                      • Single N-channel power MOSFET
                      • Advanced process technology
                      • Ultra low on-resistance
                      • 175°C operating temperature
                      • Fast switching
                      • Repetitive avalanche allowed up to Tjmax
                      • Product qualification according to JEDEC standard
                      • High-current rating
                      • Multi-vendor compatibility
                      • Standard pinout allows for drop-in replacement

                      Technical Specifications

                      Transistor Polarity

                      N Channel

                      Drain Source Voltage Vds

                      40V

                      On Resistance Rds(on)

                      0.0023ohm

                      Transistor Case Style

                      TO-220AB

                      Rds(on) Test Voltage

                      10V

                      Power Dissipation

                      330W

                      No. of Pins

                      3Pins

                      Product Range

                      -

                      MSL

                      -

                      Channel Type

                      N Channel

                      Continuous Drain Current Id

                      280A

                      Drain Source On State Resistance

                      0.0023ohm

                      Transistor Mounting

                      Through Hole

                      Gate Source Threshold Voltage Max

                      4V

                      Power Dissipation Pd

                      330W

                      Operating Temperature Max

                      175°C

                      Qualification

                      -

                      SVHC

                      No SVHC (21-Jan-2025)

                      Technical Docs (5)

                      Simulation Model EN

                      Technical Data Sheet EN

                      Simulation Model EN

                      Application Note EN

                      Technical Data Sheet EN

                      Alternatives for IRF2804PBF

                      1 Product Found

                      Associated Products

                      7 Products Found

                      Legislation and Environmental

                      US ECCN:EAR99
                      EU ECCN:Unknown
                      RoHS Compliant:Yes

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:No SVHC (21-Jan-2025)
                      Download Product Compliance Certificate

                      Product Compliance Certificate

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