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IRFS4229TRLPBF
Power MOSFET, N Channel, 250 V, 45 A, 0.048 ohm, TO-263 (D2PAK), Surface Mount
1,543 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $5.760 | $5.76 |
| Total Price | $5.76 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $5.760 |
| 10+ | $3.850 |
| 25+ | $3.570 |
| 50+ | $3.280 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFS4229TRLPBFCopy
Manufacturer Standard Lead Time8 weeks
Newark Part No.
Re-Reel43AC3281
Cut Tape43AC3281
Product RangeHEXFET
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id45A
On Resistance Rds(on)0.042ohm
Drain Source On State Resistance0.048ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation Pd330W
Power Dissipation330W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
HEXFET® Power MOSFET is specially designed for sustain, energy recovery and pass switch applications in plasma display panel. It features low EPULSE rating to reduce power dissipation in PDP sustain, energy recovery and pass switch applications.
- Advanced process technology
- Low QG for fast response
- High repetitive peak current capability for reliable operation
- Short fall & rise times for fast switching
- 175°C operating junction temperature for improved ruggedness
- Repetitive avalanche capability for robustness and reliability
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
250V
On Resistance Rds(on)
0.042ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
330W
No. of Pins
3Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
45A
Drain Source On State Resistance
0.048ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
Power Dissipation
330W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate