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IRLML2402PBF
Power MOSFET, N Channel, 20 V, 1.2 A, 0.25 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRLML2402PBFCopy
Manufacturer Standard Lead Time12 weeks
Newark Part No.
Re-Reel97K2350RL
Cut Tape97K2350
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 12 week(s)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.460 | $0.46 |
| Total Price | $0.46 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.460 |
| 50+ | $0.354 |
| 100+ | $0.242 |
| 250+ | $0.200 |
| 500+ | $0.167 |
| 1000+ | $0.135 |
| 2500+ | $0.112 |
| 5000+ | $0.093 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRLML2402PBFCopy
Manufacturer Standard Lead Time12 weeks
Newark Part No.
Re-Reel97K2350RL
Cut Tape97K2350
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id1.2A
Drain Source On State Resistance0.25ohm
On Resistance Rds(on)0.25ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd540mW
Gate Source Threshold Voltage Max700mV
Power Dissipation540mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (23-Jan-2024)
Product Overview
The IRLML2402PBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. The Infineon utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
- Industry-standard pinout
- MSL1, Consumer qualification
- Low profile (<lt/>1.1mm)
- Fast switching speed
- Ultra low on resistance
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.25ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
700mV
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
1.2A
On Resistance Rds(on)
0.25ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
540mW
Power Dissipation
540mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate