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Product Information
ManufacturerINFINEON
Manufacturer Part NoS27KS0642GABHV020
Newark Part No.64AH8939
Technical Datasheet
DRAM Memory Configuration8M x 8bit
DRAM TypeHyperRAM
Memory Density64Mbit
Memory Case StyleFBGA
DRAM Density64Mbit
Memory Configuration8M x 8bit
Clock Frequency Max200MHz
Clock Frequency200MHz
Access Time35ns
IC Case / PackageFBGA
No. of Pins24Pins
Supply Voltage Nom1.8V
IC MountingSurface Mount
Operating Temperature Min-40°C
Operating Temperature Max105°C
Product Range-
MSLMSL 3 - 168 hours
SVHCNo SVHC (21-Jan-2025)
Product Overview
S27KS0642GABHV020 is a 64MBit, (8M x 8bit), 1.8V HyperBus HYPERRAM Gen 2.0. memory device designed for high-speed and efficient data storage in various applications.
- Pseudo Static RAM (PSRAM) memory type
- HyperBus interface
- 200MHz maximum clock rate
- DDR - transfers data on both edges of the clock
- Data throughput up to 400MBps (3,200Mbps)
- Configurable output drive strength
- 35ns maximum access time (tACC)
- 1.8V VCC power supply range from 1.7V to 2V
- 24-ball Fine Ball Grid Array (FBGA)
- Temperature range from -40 to 105°C
Technical Specifications
DRAM Memory Configuration
8M x 8bit
Memory Density
64Mbit
DRAM Density
64Mbit
Clock Frequency Max
200MHz
Access Time
35ns
No. of Pins
24Pins
IC Mounting
Surface Mount
Operating Temperature Max
105°C
MSL
MSL 3 - 168 hours
DRAM Type
HyperRAM
Memory Case Style
FBGA
Memory Configuration
8M x 8bit
Clock Frequency
200MHz
IC Case / Package
FBGA
Supply Voltage Nom
1.8V
Operating Temperature Min
-40°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:3A991B2
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate