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IXFN120N65X2
Bipolar (BJT) Single Transistor, N Channel, 108 A, 650 V, 0.024 ohm, 10 V, 5 V
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ManufacturerLITTELFUSE
Manufacturer Part NoIXFN120N65X2
Newark Part No.03AH0714
Product RangeHiPerFET X2 Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $24.850 |
| 5+ | $24.850 |
| 10+ | $24.850 |
| 25+ | $24.850 |
| 100+ | $24.850 |
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFN120N65X2
Newark Part No.03AH0714
Product RangeHiPerFET X2 Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id108A
Drain Source Voltage Vds650V
On Resistance Rds(on)0.024ohm
Drain Source On State Resistance0.024ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation890W
Power Dissipation Pd890W
Operating Temperature Max150°C
Product RangeHiPerFET X2 Series
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
108A
On Resistance Rds(on)
0.024ohm
Rds(on) Test Voltage
10V
Power Dissipation
890W
Operating Temperature Max
150°C
SVHC
To Be Advised
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.024ohm
Gate Source Threshold Voltage Max
5V
Power Dissipation Pd
890W
Product Range
HiPerFET X2 Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability