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IXTF02N450
Power MOSFET, N Channel, 4.5 kV, 200 mA, 750 ohm, ISOPLUS i4-PAK, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $45.940 |
| 5+ | $43.310 |
| 10+ | $40.680 |
| 25+ | $38.050 |
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTF02N450
Newark Part No.03AH1438
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds4.5kV
Continuous Drain Current Id200mA
On Resistance Rds(on)750ohm
Drain Source On State Resistance750ohm
Transistor Case StyleISOPLUS i4-PAK
Transistor MountingThrough Hole
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max-
Power Dissipation78W
Power Dissipation Pd78W
No. of Pins3Pins
Operating Temperature Max-
Qualification-
Product Range-
MSL-
SVHCTo Be Advised
Product Overview
N-channel enhancement mode high voltage power MOSFET suitable for use in high voltage power supplies, capacitor discharge applications, pulse circuits and laser and X-Ray generation systems applications.
- Silicon chip on Direct-Copper Bond (DCB) substrate
- Isolated mounting surface
- 4500V electrical isolation
- Moulding epoxies meet UL94V-0 flammability classification
- High voltage package
- Easy to mount
- Space savings
- High power density
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
4.5kV
On Resistance Rds(on)
750ohm
Transistor Case Style
ISOPLUS i4-PAK
Rds(on) Test Voltage
-
Power Dissipation
78W
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
200mA
Drain Source On State Resistance
750ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
-
Power Dissipation Pd
78W
Operating Temperature Max
-
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability