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BDV65BG
TRANS, BJT, SINGLE, DARLINGTON, NPN
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBDV65BGCopy
Newark Part No.37K9414
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo100V
Power Dissipation Pd125W
DC Collector Current10A
RF Transistor CaseTO-247
No. of Pins3Pins
DC Current Gain hFE1000hFE
Transistor MountingThrough Hole
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Transistor Polarity
NPN
Power Dissipation Pd
125W
RF Transistor Case
TO-247
DC Current Gain hFE
1000hFE
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage V(br)ceo
100V
DC Collector Current
10A
No. of Pins
3Pins
Transistor Mounting
Through Hole
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability