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FDC6561AN
Dual MOSFET, Dual N Channel, 2.5 A, 30 V
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDC6561ANCopy
Manufacturer Standard Lead Time19 weeks
Newark Part No.
Full Reel25AC9532
Re-Reel25M9447RL
Cut Tape25M9447
Your Part Number
97,924 In Stock
Need more?
Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $0.702 | $3.51 |
| Total Price | $3.51 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $0.702 |
| 10+ | $0.574 |
| 25+ | $0.508 |
| 50+ | $0.452 |
| 100+ | $0.387 |
| 250+ | $0.341 |
| 500+ | $0.270 |
| 1000+ | $0.259 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.307 |
| 6000+ | $0.303 |
| 12000+ | $0.297 |
| 18000+ | $0.289 |
| 30000+ | $0.279 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC6561ANCopy
Manufacturer Standard Lead Time19 weeks
Newark Part No.
Full Reel25AC9532
Re-Reel25M9447RL
Cut Tape25M9447
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id2.5A
Continuous Drain Current Id N Channel2.5A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.082ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel960mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
2.5A
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
2.5A
Drain Source On State Resistance N Channel
0.082ohm
Transistor Case Style
SuperSOT
Power Dissipation N Channel
960mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Alternatives for FDC6561AN
3 Products Found
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate