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FJP13007TU
Bipolar (BJT) Single Transistor, NPN, 400 V, 8 A, 80 W, TO-220, Through Hole
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFJP13007TU
Newark Part No.84H4642
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo400V
Collector Emitter Voltage Max400V
Continuous Collector Current8A
Power Dissipation80W
Power Dissipation Pd80W
DC Collector Current8A
DC Current Gain hFE8hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transistor Case StyleTO-220
Transition Frequency4MHz
DC Current Gain hFE Min8hFE
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The FJP13007TU is an NPN Silicon Transistor features high voltage fast switching and suitable for electronic ballast and switching regulator.
- High voltage capability
- High speed switching
Applications
Lighting, Power Management
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
400V
Power Dissipation
80W
DC Collector Current
8A
Transistor Mounting
Through Hole
Transistor Case Style
TO-220
DC Current Gain hFE Min
8hFE
Qualification
-
MSL
-
Collector Emitter Voltage V(br)ceo
400V
Continuous Collector Current
8A
Power Dissipation Pd
80W
DC Current Gain hFE
8hFE
No. of Pins
3Pins
Transition Frequency
4MHz
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability