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                    • New Deals
                      1. Home
                      2. Semiconductors - Discretes
                      3. Transistors
                      4. Darlington Transistors
                      Print Page

                      MJ11015G

                      Darlington Transistor, PNP, 120 V, 200 W, 30 A, TO-3, 2 Pins

                      Date/Lot Code

                      ONSEMI MJ11015G
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerONSEMI
                      Manufacturer Part NoMJ11015G
                      Newark Part No.26K4504
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      137 In Stock

                      Need more?

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                      Order before 9pm EST standard shipping
                      QuantityPrice
                      1+$8.060
                      10+$5.550
                      25+$5.540
                      50+$5.520
                      100+$4.970
                      300+$4.640
                      Price for:Each
                      Minimum: 1
                      Multiple: 1
                      $8.06
                      Enter Your Part No/Line Note
                      Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
                      This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.

                      Product Information

                      ManufacturerONSEMI
                      Manufacturer Part NoMJ11015G
                      Newark Part No.26K4504
                      Technical Datasheet

                      Data Sheet

                      Transistor PolarityPNP
                      Collector Emitter Voltage Max120V
                      Collector Emitter Voltage V(br)ceo120V
                      Continuous Collector Current30A
                      Power Dissipation Pd200W
                      Transition Frequency-
                      Power Dissipation200W
                      DC Collector Current30A
                      RF Transistor CaseTO-3
                      No. of Pins2Pins
                      DC Current Gain hFE1000hFE
                      Transistor Case StyleTO-3
                      Transistor MountingThrough Hole
                      Operating Temperature Max200°C
                      DC Current Gain hFE Min1000hFE
                      Product Range-
                      Qualification-
                      MSL-
                      SVHCLead

                      Product Overview

                      The MJ11015G from On Semiconductor is a through hole, 30A, 120V PNP darlington bipolar power transistor in TO-204AA(TO-3) package. Features high DC current gain and monolithic construction with built-in base emitter shunt resistor. It functions as an output device in complementary general purpose amplifier applications.

                      • Collector to emitter voltage (Vce) of -120V
                      • Collector current (Ic) of -30A
                      • Power dissipation of 200W
                      • Operating junction temperature range from -55°C to 200°C
                      • Collector emitter breakdown Voltage of -120V
                      • Collector emitter saturation voltage of -3V at 20A collector current

                      Applications

                      Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial

                      Technical Specifications

                      Transistor Polarity

                      PNP

                      Collector Emitter Voltage V(br)ceo

                      120V

                      Power Dissipation Pd

                      200W

                      Power Dissipation

                      200W

                      RF Transistor Case

                      TO-3

                      DC Current Gain hFE

                      1000hFE

                      Transistor Mounting

                      Through Hole

                      DC Current Gain hFE Min

                      1000hFE

                      Qualification

                      -

                      SVHC

                      Lead

                      Collector Emitter Voltage Max

                      120V

                      Continuous Collector Current

                      30A

                      Transition Frequency

                      -

                      DC Collector Current

                      30A

                      No. of Pins

                      2Pins

                      Transistor Case Style

                      TO-3

                      Operating Temperature Max

                      200°C

                      Product Range

                      -

                      MSL

                      -

                      Technical Docs (2)

                      Technical Data Sheet EN

                      Simulation Model EN

                      Associated Products

                      4 Products Found

                      Legislation and Environmental

                      US ECCN:EAR99
                      EU ECCN:Unknown
                      RoHS Compliant:Y-Ex

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:Lead
                      Download Product Compliance Certificate

                      Product Compliance Certificate

                      Product traceability

                      Date/Lot Code

                      Customer Service
                      I Need Help
                      Sales 01.800.463.9275
                      Technical 01.800.463.9275
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