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MJ802G
Bipolar (BJT) Single Transistor, NPN, 90 V, 30 A, 200 W, TO-204, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $5.480 |
| 10+ | $5.060 |
| 25+ | $5.060 |
| 50+ | $5.050 |
| 100+ | $4.380 |
| 300+ | $4.110 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJ802G
Newark Part No.26K4528
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max90V
Collector Emitter Voltage V(br)ceo90V
Continuous Collector Current30A
Power Dissipation Pd200W
Power Dissipation200W
DC Collector Current30A
DC Current Gain hFE25hFE
Transistor MountingThrough Hole
Transistor Case StyleTO-204
No. of Pins2Pins
Transition Frequency2MHz
DC Current Gain hFE Min25hFE
Operating Temperature Max200°C
QualificationAEC-Q100
Product Range-
Automotive Qualification StandardAEC-Q100
MSL-
SVHCLead
Product Overview
The MJ802G is a 90V Silicon NPN Bipolar High Power Transistor for use as an output device in complementary audio amplifiers to 100W music power per channel.
- High DC current gain
- Excellent safe operating area
- Collector-base voltage (Vcbo = 100V)
- Emitter-base voltage (Vcbo = 4V)
Applications
Audio
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
90V
Power Dissipation Pd
200W
DC Collector Current
30A
Transistor Mounting
Through Hole
No. of Pins
2Pins
DC Current Gain hFE Min
25hFE
Qualification
AEC-Q100
Automotive Qualification Standard
AEC-Q100
SVHC
Lead
Collector Emitter Voltage Max
90V
Continuous Collector Current
30A
Power Dissipation
200W
DC Current Gain hFE
25hFE
Transistor Case Style
TO-204
Transition Frequency
2MHz
Operating Temperature Max
200°C
Product Range
-
MSL
-
Technical Docs (1)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability