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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJL3281AG
Newark Part No.42K1305
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo260V
Collector Emitter Voltage Max260V
Continuous Collector Current15A
Power Dissipation200W
Power Dissipation Pd200W
DC Collector Current15A
DC Current Gain hFE175hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transistor Case StyleTO-264
Transition Frequency30MHz
DC Current Gain hFE Min175hFE
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The MJL3281AG is a NPN complementary Bipolar Power Transistor with superior gain linearity.
- Complement to MJL1302A
- Exceptional Safe Operating Area
- Gain Matching within 10% from 50mA to 3A
- Excellent Gain Linearity
- High BVCEO
- High Frequency
- Reliable Performance at Higher Powers
- Accurate Reproduction of Input Signal
- Greater Dynamic Range
- High Amplifier Bandwidth
Applications
Audio, Industrial, Signal Processing
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
260V
Power Dissipation
200W
DC Collector Current
15A
Transistor Mounting
Through Hole
Transistor Case Style
TO-264
DC Current Gain hFE Min
175hFE
Qualification
-
MSL
-
Collector Emitter Voltage V(br)ceo
260V
Continuous Collector Current
15A
Power Dissipation Pd
200W
DC Current Gain hFE
175hFE
No. of Pins
3Pins
Transition Frequency
30MHz
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (3)
Alternatives for MJL3281AG
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability