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NTH4L022N120M3S
Silicon Carbide MOSFET, Single, N Channel, 68 A, 1.2 kV, 0.022 ohm, TO-247
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ManufacturerONSEMI
Manufacturer Part NoNTH4L022N120M3S
Newark Part No.90AJ6554
Product RangeEliteSiC Series
Technical Datasheet
84 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $14.450 |
| 10+ | $13.180 |
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Multiple: 1
$14.45
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTH4L022N120M3S
Newark Part No.90AJ6554
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id68A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)0.022ohm
Drain Source On State Resistance0.022ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max2.72V
Power Dissipation Pd352W
Power Dissipation352W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead (27-Jun-2024)
Technical Specifications
MOSFET Module Configuration
Single
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
0.022ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
2.72V
Power Dissipation
352W
Product Range
EliteSiC Series
Transistor Polarity
N Channel
Continuous Drain Current Id
68A
On Resistance Rds(on)
0.022ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation Pd
352W
Operating Temperature Max
175°C
SVHC
Lead (27-Jun-2024)
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
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