Print Page
NTH4L075N065SC1
Silicon Carbide MOSFET, Single, N Channel, 38 A, 650 V, 0.057 ohm, TO-247
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTH4L075N065SC1Copy
Manufacturer Standard Lead Time20 weeks
Newark Part No.47AK6051
Product RangeEliteSiC Series
Your Part Number
395 In Stock
Need more?
FREE Standard Delivery
on orders over $150
Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $11.000 |
| 10+ | $6.540 |
| 25+ | $6.290 |
| 50+ | $6.020 |
| 100+ | $5.580 |
| 250+ | $5.130 |
| 500+ | $5.020 |
Price for:Each
Minimum: 1
Multiple: 1
$11.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTH4L075N065SC1Copy
Manufacturer Standard Lead Time20 weeks
Newark Part No.47AK6051
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id38A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.057ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max2.8V
Power Dissipation148W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCNo SVHC (25-Jun-2025)
Alternatives for NTH4L075N065SC1
1 Product Found
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
38A
Drain Source On State Resistance
0.057ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
2.8V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
148W
Product Range
EliteSiC Series
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability