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NTHL020N090SC1
Silicon Carbide MOSFET, Single, N Channel, 118 A, 900 V, 0.02 ohm, TO-247
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTHL020N090SC1
Newark Part No.91AH8482
Product RangeEliteSiC Series
Your Part Number
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| Quantity | Price | Promotional price |
|---|---|---|
| 1+ | $28.360 | $23.470 |
| 5+ | $25.320 | $23.470 |
| 10+ | $22.260 | $22.260 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTHL020N090SC1
Newark Part No.91AH8482
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id118A
Drain Source Voltage Vds900V
Drain Source On State Resistance0.02ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max2.7V
Power Dissipation503W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
118A
Drain Source On State Resistance
0.02ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
2.7V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
900V
Transistor Case Style
TO-247
Rds(on) Test Voltage
15V
Power Dissipation
503W
Product Range
EliteSiC Series
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability