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NVHL080N120SC1
Silicon Carbide MOSFET, Single, N Channel, 44 A, 1.2 kV, 0.08 ohm, TO-247
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNVHL080N120SC1
Newark Part No.99AC9420
Product RangeEliteSiC Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $21.100 |
| 10+ | $16.280 |
| 25+ | $16.040 |
| 50+ | $15.800 |
| 100+ | $15.570 |
| 250+ | $15.330 |
| 900+ | $15.090 |
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Multiple: 1
$21.10
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVHL080N120SC1
Newark Part No.99AC9420
Product RangeEliteSiC Series
Technical Datasheet
Transistor PolarityN Channel
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id44A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)0.08ohm
Drain Source On State Resistance0.08ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Power Dissipation Pd348W
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.5V
Power Dissipation348W
Operating Temperature Max175°C
Product RangeEliteSiC Series
MSLMSL 1 - Unlimited
SVHCTo Be Advised
Product Overview
NVHL080N120SC1 is a silicon carbide (SiC) MOSFET. Typical applications are automotive on board charger, automotive DC-DC converter for EV/HEV.
- AEC-Q101 qualified and PPAP capable
- 100% UIL tested
- Low effective output capacitance (typ. Coss= 80pF)
- Drain-to-source voltage is 1200V at TJ = 25°C
- Continuous drain current RJC is 31A at TC = 25°C
- Power dissipation RJC is 89W at TC = 100°C
- Single pulse surge drain current capability is 132A at TA = 25°C, tp = 10µs, RG = 4.7ohm
- Operating junction and storage temperature range from -55 to +175°C
- TO247-3L package
Technical Specifications
Transistor Polarity
N Channel
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
0.08ohm
No. of Pins
3Pins
Rds(on) Test Voltage
20V
Power Dissipation
348W
Product Range
EliteSiC Series
SVHC
To Be Advised
MOSFET Module Configuration
Single
Continuous Drain Current Id
44A
On Resistance Rds(on)
0.08ohm
Transistor Case Style
TO-247
Power Dissipation Pd
348W
Gate Source Threshold Voltage Max
2.5V
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate