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UF3N170400B7S
Silicon Carbide MOSFET, Single, N Channel, 6.8 A, 1.7 kV, 400 mohm, D2PAK
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoUF3N170400B7SCopy
Manufacturer Standard Lead Time27 weeks
Newark Part No.78AK8899
Your Part Number
447 In Stock
800 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $12.200 |
| 50+ | $6.820 |
| 100+ | $6.570 |
| 250+ | $6.440 |
| 500+ | $6.310 |
| 1000+ | $6.180 |
| 2500+ | $6.040 |
| 5000+ | $5.910 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$12.20
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoUF3N170400B7SCopy
Manufacturer Standard Lead Time27 weeks
Newark Part No.78AK8899
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id6.8A
Drain Source Voltage Vds1.7kV
Drain Source On State Resistance400mohm
Transistor Case StyleD2PAK
No. of Pins7Pins
Rds(on) Test Voltage12V
Gate Source Threshold Voltage Max-6.7V
Power Dissipation68W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
6.8A
Drain Source On State Resistance
400mohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
-6.7V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.7kV
Transistor Case Style
D2PAK
Rds(on) Test Voltage
12V
Power Dissipation
68W
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate