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TP65H035G4YS
Gallium Nitride (GaN) Transistor, 650 V, 46.5 A, 0.041 ohm, 42.7 nC, TO-247, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerRENESAS
Manufacturer Part NoTP65H035G4YS
Newark Part No.26AM1877
Product RangeSuperGaN Series
Technical Datasheet
1,181 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $15.140 |
Price for:Each
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Multiple: 1
$15.14
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Product Information
ManufacturerRENESAS
Manufacturer Part NoTP65H035G4YS
Newark Part No.26AM1877
Product RangeSuperGaN Series
Technical Datasheet
Drain Source Voltage Vds650V
Continuous Drain Current Id46.5A
Drain Source On State Resistance0.041ohm
Typical Gate Charge42.7nC
Transistor Case StyleTO-247
Transistor MountingThrough Hole
No. of Pins4Pins
Product RangeSuperGaN Series
Qualification-
SVHCTo Be Advised
Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.041ohm
Transistor Case Style
TO-247
No. of Pins
4Pins
Qualification
-
Continuous Drain Current Id
46.5A
Typical Gate Charge
42.7nC
Transistor Mounting
Through Hole
Product Range
SuperGaN Series
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability