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SKM50GB12T4
IGBT Module, Half Bridge, 81 A, 1.85 V, 175 °C, SEMITRANS 2
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| Quantity | Price |
|---|---|
| 1+ | $94.520 |
| 5+ | $75.610 |
| 16+ | $70.970 |
| 32+ | $66.160 |
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$94.52
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Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSKM50GB12T4
Newark Part No.96W3227
Technical Datasheet
IGBT ConfigurationHalf Bridge
DC Collector Current81A
Continuous Collector Current81A
Collector Emitter Saturation Voltage1.85V
Collector Emitter Saturation Voltage Vce(on)1.85V
Power Dissipation-
Power Dissipation Pd-
Operating Temperature Max175°C
Junction Temperature, Tj Max175°C
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleSEMITRANS 2
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyIGBT 4 Fast [Trench]
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Half Bridge
Continuous Collector Current
81A
Collector Emitter Saturation Voltage Vce(on)
1.85V
Power Dissipation Pd
-
Junction Temperature, Tj Max
175°C
Transistor Case Style
SEMITRANS 2
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
To Be Advised
DC Collector Current
81A
Collector Emitter Saturation Voltage
1.85V
Power Dissipation
-
Operating Temperature Max
175°C
Collector Emitter Voltage V(br)ceo
1.2kV
IGBT Termination
Stud
IGBT Technology
IGBT 4 Fast [Trench]
Product Range
-
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate