Print Page
SCTL90N65G2V
Silicon Carbide MOSFET, Single, N Channel, 40 A, 650 V, 0.018 ohm, PowerFLAT
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCTL90N65G2V
Newark Part No.40AJ8413
Technical Datasheet
1,854 In Stock
Need more?
Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $43.770 |
| 10+ | $40.820 |
| 25+ | $40.040 |
| 50+ | $38.510 |
| 100+ | $37.230 |
| 250+ | $36.470 |
| 500+ | $35.910 |
| 1000+ | $35.530 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$43.77
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCTL90N65G2V
Newark Part No.40AJ8413
Technical Datasheet
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id40A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.018ohm
On Resistance Rds(on)0.018ohm
Transistor Case StylePowerFLAT
No. of Pins5Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max3.2V
Power Dissipation935W
Power Dissipation Pd935W
Operating Temperature Max175°C
Product Range-
MSLMSL 3 - 168 hours
SVHCNo SVHC (21-Jan-2025)
Product Overview
SCTL90N65G2V is a silicon carbide power MOSFET. This silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Typical applications are switching mode power supply, DC-DC converters, and industrial motor control.
- Very fast and robust intrinsic body diode, low capacitances
- Source sensing pin for increased efficiency
- Drain-source breakdown voltage is 650V minimum at VGS = 0V, ID = 1mA
- Static drain-source on-resistance is 24mohm max at VGS = 18V, ID = 40A
- Drain current (continuous) at TC = 25°C is 40A
- Input capacitance is 3380pF typical at VDS = 400V, f = 1MHz, VGS = 0V
- Rise time is 38ns typ at VDD = 400V, ID = 50A, RG = 2.2ohm, VGS = -5V to 18V
- PowerFLAT 8x8 HV package
- Operating junction temperature range from -55 to 175°C
Technical Specifications
MOSFET Module Configuration
Single
Channel Type
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.018ohm
No. of Pins
5Pins
Gate Source Threshold Voltage Max
3.2V
Power Dissipation Pd
935W
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
40A
Drain Source On State Resistance
0.018ohm
Transistor Case Style
PowerFLAT
Rds(on) Test Voltage
18V
Power Dissipation
935W
Operating Temperature Max
175°C
MSL
MSL 3 - 168 hours
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability