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TPN2010FNH,L1Q(M
Power MOSFET, N Channel, 250 V, 9.9 A, 0.198 ohm, TSON, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $1.130 |
| 10+ | $0.967 |
| 25+ | $0.877 |
| 50+ | $0.801 |
| 100+ | $0.680 |
| 250+ | $0.609 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$5.65
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTPN2010FNH,L1Q(M
Newark Part No.08AK7547
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id9.9A
Drain Source On State Resistance0.198ohm
On Resistance Rds(on)0.168ohm
Transistor Case StyleTSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation39W
Power Dissipation Pd39W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.198ohm
Transistor Case Style
TSON
Rds(on) Test Voltage
10V
Power Dissipation
39W
No. of Pins
8Pins
Product Range
-
SVHC
To Be Advised
Channel Type
N Channel
Continuous Drain Current Id
9.9A
On Resistance Rds(on)
0.168ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
39W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
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