Print Page
UF3C065030B3
Silicon Carbide MOSFET, Single, N Channel, 65 A, 650 V, 27 mohm, D2PAK
Image is for illustrative purposes only. Please refer to product description.
1,488 In Stock
Need more?
181 Delivery in 1-3 Business Days(US stock)
1307 Delivery in 2-4 Business Days(UK stock)
Order before 6pm EST Standard Shipping
| Quantity | Price |
|---|---|
| 1+ | $31.620 |
| 10+ | $24.700 |
| 25+ | $24.700 |
| 50+ | $24.700 |
| 100+ | $24.700 |
| 250+ | $24.690 |
| 500+ | $24.690 |
| 1600+ | $24.690 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$31.62
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoUF3C065030B3Copy
Newark Part No.47AK1745
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id65A
Drain Source Voltage Vds650V
Drain Source On State Resistance27mohm
On Resistance Rds(on)0.027ohm
Transistor Case StyleD2PAK
No. of Pins3Pins
Rds(on) Test Voltage12V
Gate Source Threshold Voltage Max5V
Power Dissipation242W
Power Dissipation Pd242W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (17-Jan-2023)
Technical Specifications
MOSFET Module Configuration
Single
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.027ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
5V
Power Dissipation Pd
242W
Product Range
-
Channel Type
N Channel
Continuous Drain Current Id
65A
Drain Source On State Resistance
27mohm
Transistor Case Style
D2PAK
Rds(on) Test Voltage
12V
Power Dissipation
242W
Operating Temperature Max
175°C
SVHC
No SVHC (17-Jan-2023)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate