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IRF530PBF
Power MOSFET, N Channel, 100 V, 14 A, 0.16 ohm, TO-220AB, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $1.030 |
| 10+ | $0.940 |
| 25+ | $0.864 |
| 50+ | $0.864 |
| 100+ | $0.864 |
| 500+ | $0.864 |
| 1000+ | $0.802 |
| 2500+ | $0.716 |
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Multiple: 1
$1.03
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRF530PBF
Newark Part No.63J7316
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id14A
On Resistance Rds(on)0.16ohm
Drain Source On State Resistance0.16ohm
Transistor MountingThrough Hole
Power Dissipation Pd88W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Transistor Case StyleTO-220AB
Power Dissipation88W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The IRF530PBF is an N-channel Power MOSFET provides the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirement
Applications
Industrial, Commercial
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.16ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220AB
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
14A
Drain Source On State Resistance
0.16ohm
Power Dissipation Pd
88W
Gate Source Threshold Voltage Max
4V
Power Dissipation
88W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Alternatives for IRF530PBF
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Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability