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IRFSL9N60APBF
Power MOSFET, N Channel, 600 V, 9.2 A, 0.75 ohm, TO-262, Through Hole
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 10 week(s)
| Quantity | Price |
|---|---|
| 1000+ | $1.500 |
| 2500+ | $1.490 |
Price for:Each
Minimum: 1000
Multiple: 1000
$1,500.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFSL9N60APBF
Newark Part No.63J7029
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id9.2A
On Resistance Rds(on)0.75ohm
Drain Source On State Resistance0.75ohm
Transistor MountingThrough Hole
Power Dissipation Pd170W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Transistor Case StyleTO-262
Power Dissipation170W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.75ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Transistor Case Style
TO-262
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
9.2A
Drain Source On State Resistance
0.75ohm
Power Dissipation Pd
170W
Gate Source Threshold Voltage Max
4V
Power Dissipation
170W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate