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SI1401EDH-T1-GE3
Power MOSFET, P Channel, 12 V, 4 A, 0.034 ohm, SOT-363, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI1401EDH-T1-GE3Copy
Manufacturer Standard Lead Time16 weeks
Newark Part No.69W7175
Your Part Number
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1401EDH-T1-GE3Copy
Manufacturer Standard Lead Time16 weeks
Newark Part No.69W7175
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id4A
Drain Source On State Resistance0.034ohm
Transistor Case StyleSOT-363
Transistor MountingSurface Mount
Rds(on) Test Voltage1.5V
Gate Source Threshold Voltage Max400mV
Power Dissipation2.8W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
4A
Transistor Case Style
SOT-363
Rds(on) Test Voltage
1.5V
Power Dissipation
2.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.034ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
400mV
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate