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SI1922EDH-T1-GE3
Dual MOSFET, N Channel, 20 V, 1.3 A, 0.198 ohm
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2,150 In Stock
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on orders over $150
| Quantity | Price |
|---|---|
| 1+ | $14.340 |
| 25+ | $9.460 |
| 50+ | $8.040 |
| 100+ | $6.600 |
| 250+ | $6.560 |
| 500+ | $5.400 |
| 1000+ | $4.780 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$14.34
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1922EDH-T1-GE3Copy
Newark Part No.65T1686
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel1.3A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.198ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel1.25W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
SVHC
To Be Advised
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
1.3A
Drain Source On State Resistance N Channel
0.198ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
1.25W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate