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SI2302CDS-T1-E3
Power MOSFET, N Channel, 20 V, 2.6 A, 0.057 ohm, SOT-23, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI2302CDS-T1-E3Copy
Manufacturer Standard Lead Time36 weeks
Newark Part No.
Re-Reel69W7186RL
Cut Tape69W7186
Your Part Number
9,186 In Stock
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2302CDS-T1-E3Copy
Manufacturer Standard Lead Time36 weeks
Newark Part No.
Re-Reel69W7186RL
Cut Tape69W7186
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2.6A
Drain Source On State Resistance0.057ohm
On Resistance Rds(on)0.045ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd710mW
Gate Source Threshold Voltage Max400mV
Transistor Case StyleSOT-23
Power Dissipation710mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The SI2302CDS-T1-E3 is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch and DC-to-DC converter applications.
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management, Portable Devices
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.057ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
710mW
Transistor Case Style
SOT-23
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
2.6A
On Resistance Rds(on)
0.045ohm
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
400mV
Power Dissipation
710mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate