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SI2319CDS-T1-GE3
Power MOSFET, P Channel, 40 V, 4.4 A, 0.077 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI2319CDS-T1-GE3Copy
Manufacturer Standard Lead Time37 weeks
Newark Part No.
Full Reel86R3869
Cut Tape05W6934
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 37 week(s)
Notify me when back in stock
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 3000 | $0.292 | $876.00 |
| Total Price | $876.00 | ||
Cut Tape
| Quantity | Price |
|---|---|
| 3000+ | $0.292 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.255 |
| 6000+ | $0.236 |
| 12000+ | $0.218 |
| 18000+ | $0.208 |
| 30000+ | $0.198 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2319CDS-T1-GE3Copy
Manufacturer Standard Lead Time37 weeks
Newark Part No.
Full Reel86R3869
Cut Tape05W6934
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id4.4A
On Resistance Rds(on)0.064ohm
Drain Source On State Resistance0.077ohm
Transistor MountingSurface Mount
Power Dissipation Pd2.5W
Rds(on) Test Voltage10V
Transistor Case StyleSOT-23
Gate Source Threshold Voltage Max1.2V
Power Dissipation2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (10-Jun-2022)
Product Overview
The SI2319CDS-T1-GE3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature.
- ±20V Gate-source voltage
Applications
Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.064ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.2V
No. of Pins
3Pins
Qualification
-
SVHC
No SVHC (10-Jun-2022)
Transistor Polarity
P Channel
Continuous Drain Current Id
4.4A
Drain Source On State Resistance
0.077ohm
Power Dissipation Pd
2.5W
Transistor Case Style
SOT-23
Power Dissipation
2.5W
Operating Temperature Max
150°C
Product Range
-
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate