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SI2323DDS-T1-GE3
MOSFET, P-CH, -20V, -5.3A, SOT-23
Available to Order
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $1.170 | $5.85 |
| Total Price | $5.85 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $1.170 |
| 10+ | $0.852 |
| 15+ | $0.779 |
| 25+ | $0.706 |
| 50+ | $0.633 |
| 125+ | $0.560 |
| 250+ | $0.486 |
| 500+ | $0.411 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2323DDS-T1-GE3Copy
Manufacturer Standard Lead Time38 weeks
Newark Part No.
Re-Reel01AC4978RL
Cut Tape01AC4978
Product RangeTrenchFET
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id5.3A
Drain Source On State Resistance0.039ohm
On Resistance Rds(on)0.032ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation1.7W
Power Dissipation Pd1.7W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.039ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.7W
No. of Pins
3Pins
Product Range
TrenchFET
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
5.3A
On Resistance Rds(on)
0.032ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
1.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Alternatives for SI2323DDS-T1-GE3
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate